CS537 12/14
Today Flash-based SSD Solid State => Circuitry persistent storage basic characteristics from “row” flash => storage device Basics NAND Flash “trap” charge, encode bit(s) Bank/Chip operations read (page) (~2KB, 4KB) --------------------------------- | |page| | | --------------------------------- | block | erase (block) (~256KB) program (page) to write erase entire block then, you can program each page within block exactly once if you want to overwrite, must erase/prog again Performance read 10s of microseconds much faster then hard drive erase a few milliseconds program 100s of microseconds Reliability “wear out” once you erase/program block “too many” times it stops working “to many”: 10k ~ 100k times SSD: Block-level Device API: read, write block Map to read, erase/program Parallel storage device |------------------------ | ------------ ------ | | |Controller| |DRAM| | | ------------ ------ | | --- --- | | |F| |F| ....